IEEE EDS FET100 Celebration

Scaling Beyond Moore: Celebrating 100 Years of the Field-Effect Transistor and Shaping the Future of Intelligent Electronics

Organized by Institute of Radio Physics and Electronics, University of Calcutta in association with the IEEE EDS Calcutta University Student Branch Chapter

18–21 December 2026

University of Calcutta, India

Introduction

The IEEE EDS FET100 Celebration, in association with the IEEE EDS Calcutta University Student Branch Chapter, will be organized as a special program during the 9th International Conference on Computers and Devices for Communication (CODEC 2026). The celebration will be held from 18–21 December 2026 at the University of Calcutta, India, bringing together researchers, academicians, industry professionals, and students to commemorate a century of innovation in Field-Effect Transistor (FET) technology and its transformative impact on the semiconductor ecosystem.

The year marks the centenary celebration of Julius Edgar Lilienfeld's visionary concept of the Field-Effect Transistor, proposed in 1925. Over the past hundred years, the FET has transformed virtually every aspect of modern technology, enabling integrated circuits, personal computing, mobile communications, cloud computing, artificial intelligence, autonomous systems, and the Internet of Things.

Today, the semiconductor industry stands at another historic transition. Traditional CMOS scaling is approaching fundamental limits, while emerging applications such as AI, quantum technologies, edge computing, and sustainable data centres demand unprecedented improvements in performance, energy efficiency, and functionality.

The IEEE EDS FET100 Celebration at CODEC 2026 aims to commemorate this remarkable century of innovation while exploring the technological pathways that will define the next century of transistor evolution.

Scope of the Event

1. Evolution of FET Technologies

From planar MOSFETs to FinFETs, Gate-All-Around FETs (GAAFETs), Complementary FETs (CFETs), and advanced CMOS scaling.

2. Beyond-Moore Devices

Tunnel FETs (TFETs), Negative-Capacitance FETs (NCFETs), steep-slope devices, ferroelectric FETs, spintronic and quantum devices for ultra-low-power and high-performance electronics.

3. Emerging Materials and Nanoelectronics

Two-dimensional semiconductors, van der Waals heterostructures, wide-bandgap materials, novel channel materials, and quantum-enabled nanoelectronic devices.

4. Circuits and Computing Architectures

Advanced VLSI circuits, heterogeneous integration, chiplet-based architectures, many-core processors, hardware accelerators, and circuit–device co-design for next-generation computing platforms.

5. FETs Enabling Intelligent Systems

AI hardware, Green AI, edge computing, Internet of Things (IoT), cyber-physical systems, and energy-efficient intelligent electronics.

6. Communication, Photonics, and Sensing

RF and millimeter-wave devices, quantum-enabled nano-antennas, integrated photonics, optoelectronic devices, and advanced sensing technologies.

7. Reliability, Manufacturing, and System Integration

Device reliability, variability, manufacturability, advanced packaging, 3D integration, and technology–system co-optimization for future semiconductor platform.

The celebration will commence with a dedicated IEEE EDS FET100 Pre-conference Workshop on 18 December 2026, followed by a series of FET100-themed plenary lectures, invited talks, technical sessions, student activities and recognition programs integrated throughout the conference during 19-21 December, 2026.

IEEE EDS FET100 Pre-conference Workshop

Date: December 18, 2026

Pre-conference workshop comprising tutorial lectures to be delivered by distinguished speakers, covering the historical evolution of the field-effect transistor, advanced CMOS technologies, beyond-Moore devices, emerging semiconductor materials, and future transistor architectures.

Distinguished FET100 Speakers

Ajit Kumar Panda

IEEE EDS DL, Michigan, USA

Manoj Saxena

IEEE EDS DL, Deen Dayal Upadhyay College

Gananath Dash

IEEE EDS DL, Sambalpur University

Prasanta Kumar Basu

University of Calcutta

FET100 Plenary Lecture Series

Date: December 19–21, 2026

Plenary lectures will collectively demonstrate how a century of FET innovation has enabled transformative advances across the semiconductor ecosystem.

Lecture Themes

Evolution from transistor scaling to advanced VLSI circuits, many-core and chiplet-based computing architectures.
Heterogeneous integration, advanced packaging, silicon lifecycle management, design-for-testability, and AI hardware accelerators for next-generation computing platforms.
Quantum-enabled nanoelectronics, nano-antennas, and emerging communication technologies beyond conventional CMOS.
Energy-efficient (Green) AI, sustainable computing, and intelligent cloud infrastructure.
Machine learning, IoT, and cyber-physical systems, highlighting the role of advanced semiconductor technologies in enabling intelligent edge systems.